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Introducing Externally Induced Voltage Alterations (XIVA)

Our customers gave us a challenge: "We need constant voltage bias to operate our devices, but LIVA, SEI, and TIVA require constant current for sensing." Our answer was Externally Induced Voltage Alterations—XIVA.

This revolutionary approach to Laser Scanning Microscope (LSM) failure-analysis techniques separates the bias function from the sensing function. Constant current sensing with constant voltage bias is the result. An additional benefit of this separation is the ability to independently optimize the sensing function from the bias function.

XIVA encompasses and extends all of the prior techniques of OBIC, LIVA, SEI, and TIVA. This new technique offers a number of advantages:
  • Encompasses all LSM failure analysis techniques into a single package.
  • Allows constant voltage bias of test devices (LIVA, SEI, and TIVA require constant current bias).
  • Improves on sensitivity of prior approaches by more than an order of magnitude.

Sample XIVA Images

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20X TIVA image of Level 5 short obtained with enhanced XIVA sensing

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10X TIVA/SEI image of Level 3 short and additional structures in conduction path using enhanced XIVA sensing

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Increased sensitivity produces images with incredible detail as shown in the pictures below and in the next column. This detail leads to the ability to go beyond failure isolation to failure diagnostics. Analysis techniques for estimating the depth of a failure through the length of trailing tail is discussed in a recent paper.1

Noisy signal of standard TIVA technique

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XIVA - LIVA signal (red overlay) on infrared reflected-light image (green background)

 

Strong signal using XIVA technique

1 R. A. Falk, "Advanced LIVA/TIVA Techniques", ISTFA 2001, to be published.

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